Specifications

Electroluminescence Image System

The electroluminescence technology is biased the forward current to the solar cell such as LED and the emitting wavelength is correlated to band-edge emission or defect asssistance emssion. The EL intensity is directly correlated to defect density and recombination coefficient. The less of the part of defect, the luminescence intensity will be stronger, and the more part of the defect, the luminescence intensity will be weaker.  The electroluminescence image can reveal the material of the solar cell module defects, such as material defects, sintering wave, contamination, micro-crack and broken finger etc.  The EL image of solar cell is dependent on injection current level, and used to evaluate the optimized cell/module structure for high efficiency approach. For absorber with the same band gap, the EL intensity is proportional to open circuit voltage (Voc). The quantitative analysis of EL image has high benefit for process control instead of qualitative inspection. The reliability and aging of solar cell/module can also be studied by EL image system for the investigation of degradation parameters. The defect, crack, and shunting points can also be obtained.  The sheet resistance (Rs) distribution can be extracted by the combination of PL and EL images with proper measurement condition.

* Luminescence Photo Energy of Solar Cell at Room Temperature,Corresponding Energy Gap of  Material and Radiative Recombination Mechanism

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